期刊
IEEE SENSORS JOURNAL
卷 5, 期 3, 页码 446-454出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2005.845199
关键词
combined pressure sensors; double-bridge; finite element (FE); microelectromechanical system (MEMS); O-ring; piezoresistive; silicon; stress; Wheatstone
A combined differential and static silicon microelectromechanical system pressure sensor based on a double piezoresistive Wheatstone bridge structure is presented. The developed sensor has a conventional (inner) bridge on a micromachined diaphragm and a secondary (outer) bridge on the chip substrate. A novel approach is demonstrated with a combined measurement of outputs from the two bridges, which results in a combined deduction of both differential and static media pressure. Also following this new approach, a significant improvement in differential pressure sensor accuracy is achieved. Output from the two bridges depends linearly on both differential and absolute (relative to atmospheric pressure) media pressure. Furthermore, the sensor stress distributions involved are studied by three-dimensional finite-element (FE) stress analysis. Furthermore, the FE analysis evaluates current and other potential piezoresistor positions on the outer Wheatstone bridge.
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