Emergence of p(2x2) on highly doped n-type Si(100) surfaces:: A scanning tunneling microscopy and spectroscopy study -: art. no. 245319

Scanning tunneling microscopy (STM) and spectroscopy were used to study the structural change between c(4x2) and p(2x2) on highly doped n-type Si(100) surfaces at 6 K. Sample voltage control during STM imaging allowed us to manipulate the surface structure between c(4x2) and p(2x2). We found that the sample voltage for producing p(2x2) [c(4x2)] depends upon the tip-sample distance and dopant concentration. Coinciding with that, energy shifts of the pi(*) (pi) state in tunneling spectra were observed. These results suggest that the structural change caused through STM was due to electron (hole) injection into the pi(*)(pi) state. Also, the difference in how the c(4x2) and p(2x2) domains emerge, when electrons or holes are injected into the surface, can be understood by considering the electronic features of the pi and pi(*) states.