期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 44, 期 6A, 页码 3879-3884出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.3879
关键词
HMDSO; water vapor; low-dielectric-constant film; Cu interconnections; PE-CVD; SiOCH; PALS; pore size; hardness; Young's modulus
We have developed low dielectric constant SiOCH films by plasma-enhanced chemical vapor deposition (PE-CVD) using hexamethyldisiloxane (HMDSO) containing a siloxane structure and water vapor (H2O) gases. Although the film was deposited using H2O vapor, the content of H2O is very small and the k value can be reduced to the order of 2.5. The leakage current is small and on the order of 10(-9) to 10(-10) A/CM2 at 1 MV/CM2. The hardness and Young's modulus are larger than 2 and 10 GPa, respectively at the k value of 2.8. However the values decrease abruptly with decreasing k value. The mechanism in which the structure and Young's modulus of PE-CVD low-k film decrease with changing k value and deposition conditions is discussed.
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