Hole transport mechanisms in CuGaSe2

Hall and conductivity measurements have been performed on epitaxial and polycrystalline CuGaSe2 films. Temperature dependencies of charge carrier concentration and mobility are analyzed in terms of band transport model and standard scattering mechanisms, and are fitted simultaneously. Defect concentrations are lower than previously reported. Dominant scattering mechanisms in the single crystalline films are nonpolar optical phonon and acoustical phonon scattering, and charged defect scattering. Room temperature mobility in polycrystalline films is considerably lower than in epitaxial films. This can not only be attributed to scattering at extended defects. (c) 2004 Elsevier B.V. All rights reserved.