期刊
JOURNAL OF MATERIALS SCIENCE
卷 40, 期 12, 页码 3051-3057出版社
SPRINGER
DOI: 10.1007/s10853-005-2664-6
关键词
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The stability and electronic structure of cation- and anion-compensated interfaces between (0001) lattice-matched slabs of GaN and ZnO have been considered. It was found that, irrespective of interfacial polarity, cation-compensated interfaces are by approximately 20 meV/unit cell more stable than the corresponding anion-compensated interfaces. Valence band offsets of 1.0 and 0.5 eV have been found at the cation- and anion-compensated interfaces, respectively.
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