Non-volatile Al2O3 memory using an Al-rich structure as a charge-storing layer

The memory characteristics of a new non-volatile Al2O3 memory deposited by electron-cyclotron-resonance sputtering are described. Al-rich Al2O3 was fabricated at a reduced oxygen gas flow rate. Capacitance-voltage characteristics show a large hysteresis window owing to the Al-rich structure. This memory will stay non-volatile for several years or more.