期刊
OPTICS COMMUNICATIONS
卷 250, 期 4-6, 页码 316-320出版社
ELSEVIER
DOI: 10.1016/j.optcom.2005.02.041
关键词
silicon; radiative properties; emissivity
类别
We study several schemes to enhance the emission of radiation of silicon surfaces in the infrared. First, we investigate the emission pattern of microscale lamellar gratings ruled on doped silicon which is substantially modified due to the excitation of surface plasmons. In addition to their remarkable spectral selectivity, those sources emit 50% more than a plane interface of bulk doped silicon. An interferential antireflection system similar to a Salisbury screen is also considered. This broadband emitter allows a significant enhancement of the total emitted power compared to the plane interface. These results may have broad applications in sensing and radiative cooling. (c) 2005 Elsevier B.V. All rights reserved.
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