Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon

The first room-temperature operation of In0.5Ga0.5As quantum dot lasers grown directly on Si substrates with a thin (<= 2 mu m) GaAs buffer layer is reported. The devices are characterised by J(th) similar to 1500 A/cm(2), output power > 50 mW, and large T-0 (244 K) and constant output slope efficiency (>= 0.3 W/A) in the temperature range 5-95 degrees C.