期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 20, 期 7, 页码 S286-S292出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/20/7/020
关键词
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Terahertz near-field microscopy may serve as a novel tool to measure the high-frequency permittivity of dielectric surfaces on submicrometre semiconductor structures. We present an apertureless THz near-field microscope, which allows for spatial resolutions as small as 150 nm. A new model has been developed that considers the field coupling the scanning probe with a sample and reproduces the image data qualitatively and quantitatively.
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