Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots -: art. no. 035342

We present new results on the simulation of two-dimensional (2D) quantum dot(s) (QDs) InAs/InP superlattices, emitting at 1.55 mu m, the optical telecommunication wavelength. QDs and wetting layer (WL) electronic energy states are close in such a system. Using the Fourier-transformed Schrodinger equation developed on a mixed basis, we describe the wetting layer-assisted inter-QDs lateral (WLaiQD) coupling by studying the influence of WL states on QDs states and vice versa. The results show that WL and QDs have to be considered as a unique system, in strong coupling conditions. The increase of QDs density on the WL leads to enhanced splitting and miniband effects on QDs states. It induces a fragmentation of WL density of states interpreted as a 0D-like confinement of WL states. A comparison is made with a real high QDs density sample. It is expected to have an impact on carrier-capture phenomena in optoelectronic devices using high-density QDs in the active region.