Controlled synthesis of In2O3 octahedrons and nanowires

Indium oxide (In2O3) octahedrons and nanowires were synthesized by chemical vapor deposition (CVD) through selecting appropriate source materials and controlling proper external conditions. The growth mechanisms of In2O3 octahedrons and nanowires were analyzed in detail, based on which growth model of single-crystalline In2O3 nanostructures with different morphologies was proposed. The vapor pressures of different source materials, the temperature difference between the central heating zones and the product deposition zones, the reaction time, and the surface energies are all responsible for the final crystalline morphologies of the In2O3 nanostructures. The acquired results may facilitate not only the exploration of new approaches of preparing various nanostructures for potential technical application but also a deeper understanding of the fundamental physical and chemical processes of CVD methods.