期刊
IEEE ELECTRON DEVICE LETTERS
卷 26, 期 7, 页码 489-491出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.851238
关键词
associated gain; MOSFET; plastic; RF noise
We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-mu m RF MOSFETs, after thinning down the Si substrate to 30 mu m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-mu m node (L-g = 80 nm) devices.
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