Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2

We report on the fabrication of thin ZnO:N film by thermal oxidation of zinc nitride layers sputter-deposited on quartz, sapphire, GaN, and ZnO surfaces. Through optimising several Crucial technological steps we have achieved p-type conductivity with the carrier concentration in mid 10(17) cm(-3) range and mobility of similar to 10 cm(2)/Vs. Rich photoluminescence spectra have been observed in the region corresponding to the fundamental energy gap region with peaks that can be related to acceptor bound exciton transitions. The transmittance of p-ZnO:N in the whole visible spectrum is similar to 80%. (c) 2005 Elsevier Ltd. All rights reserved.