A transparent and conductive film prepared by RF magnetron cosputtering system at room temperature

The electrical and optical properties of transparent and conductive oxide films obtained from a cosputtering system with indium-tin oxide (ITO) and zinc oxide (ZnO) targets have been investigated. The resistivity of these ITO films deposited at an rf power of 150 W was markedly improved with additional simultaneous ZnO target cosputtering at rf powers ranging from 25 to 200 W. A transparent film of lowest resistivity (3.69 x 10(-4) Omega cm) was achieved at room temperature where the rf powers of the cosputtering for the ITO and ZnO targets were 150 and 75 W, respectively. The average transmittance obtained from these cosputtered films in the visible spectrum was over 80%.