期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 44, 期 7A, 页码 4780-4783出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.4780
关键词
GaS; layered structure; III-VI compound semiconductors; rf reactive magnetron sputtering; thin film; crystal growth; optical absorption spectra
Good-crystallinity gallium sulfide (GaS) films were prepared on silica glass substrates by RF reactive magnetron sputtering with an Ar and H(2) gas mixture with various hydrogen fractions (H(mf) = 0.1-0.4). The structure and optical properties of the sputtered GaS films were studied. The X-ray diffraction measurements showed that GaS films deposited at 500 degrees C using Ar as the sputtering gas (H(mf) = 0) had amorphous structures, while those using H(mf) = 0.4 had polycrystalline structures with the c-axis perpendicular to the substrate plane. The absorption edges of the polycrystalline GaS films showed a direct allowed transition with an optical gap of E(og) = 3.0eV, which was in good agreement with those measured in single-crystal GaS by previous researchers.
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