Carbon etching with a high density plasma etcher

Generating suitable passivation on the carbon sidewall is a major challenge facing carbon etching especially for films thicker than 500 nm. Patterning carbon hard mask stacks for sub 90 nm technologies was tested for three different O-2-based chemistries using an inductively coupled plasma etch tool. The results show that the etched carbon profiles are highly dependant upon the O-2 flow and the total time of the etch process. Extended over etch times quite often initiates lateral etching and rapid loss of profile and critical dimension. An HBr/O-2/N-2 chemistry has been shown to provide the best options for profile control and more resistance to profile loss during extended over etching than the other chemistries which were tested during this study. (c) 2005 Elsevier B.V. All rights reserved.