期刊
SCIENCE
卷 309, 期 5731, 页码 113-115出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1112666
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We report a high-throughput procedure for lithographically processing one-dimensional nanowires. This procedure, termed on-wire lithography, combines advances in temptate-directed synthesis of nanowires with electrochemical deposition and wet-chemical etching and allows routine fabrication of face-to-face disk arrays and gap structures in the range of five to several hundred nanometers. We studied the transport properties of 13-nanometer gaps with and without nanoscopic amounts of conducting polymers deposited within by dip-pen nanotithography.
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