期刊
IEEE ELECTRON DEVICE LETTERS
卷 26, 期 7, 页码 492-494出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.851127
关键词
cutoff frequency; Schottky barrier diodes; silicon; terahertz (THz)
CoSi2-Si Schottky barrier diodes on an n-well and on a p-well/substrate are fabricated without a guard ring in a 130-nm foundry CMOS process. The n- and p-type diodes with an area of 16 x 0.32 x 0.32 mu m(2) achieve cutoff frequencies of similar to 1.5 and similar to 1.2 THz at 0-V bias, respectively. These are the highest cutoff frequencies for Schottky diodes fabricated in foundry silicon processes. The leakage currents at 1.0-V reverse bias vary between 0.4 to 10 nA for the n-type diodes. The break down voltage for these diodes is around 15 V. It should be possible to use these in millimeter wave and far infrared detection.
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