期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 38, 期 13, 页码 2088-2102出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/38/13/004
关键词
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Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 mu m. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.
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