New developments on FRAMs: [3D] structures and all-perovskite FETs

A discussion is presented of new directions in ferroelectric random access memories (FRAMs) and ferroelectric capacitors for dynamic random access memories (DRAMs), emphasizing [3D] structures and new materials, as well as ferroelectric gates and new mechanisms of domain wall motion in nano-scale geometries. (c) 2005 Elsevier B.V. All rights reserved.