Influence of Mg content on the band alignment at CdS/(Zn,Mg)O interfaces -: art. no. 032101

In this investigation, we studied electronic properties of the CdS/Zn1-xMgxO (x = 0, 0.15) interface using photoelectron spectroscopy. ZnO and (Zn,Mg)O films were deposited by magnetron sputtering from ceramic targets on thermally evaporated CdS. Valence-band offsets of Delta E-V = 1.2 +/- 0.1 eV are determined for both interfaces. The gap difference of 0.3 eV between ZnO and Zn0.85Mg0.15O is therefore fully accommodated by a different conduction-band energy, which should be well suited for modulation doping in ZnO/(Zn, Mg)O heterostructures. (c) 2005 American Institute of Physics.