Generation of spin currents via Raman scattering

We show theoretically that stimulated spin-flip Raman scattering can be used to inject spin currents in doped semiconductors with spin-split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zinc blende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.