High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

A separate absorption, charge, and multiplication ln(0.53)Ga(0.47)As-In0.52Al0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandNvidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.