Transport in a lithographically defined Si:Ge Coulomb-blockade island under microwave irradiation -: art. no. 085313

Electron transport through a lithographically defined single-island single-electron transistor (SET) is studied with and without illumination by microwave radiation. The SET is defined from 30-nm n-type phosphorous doped SiGe at a doping density of 10(19) cm(-3). The device was characterized at mK temperatures in the absence of illumination and exhibited single island Coulomb-blockade behavior. Further experiments were then carried out in the presence of radiation where pumping currents associated with photon assisted tunneling were observed. The device behavior was finally analyzed with the help of simulation software where methods for relating the radiation coupling characteristics to the SET were studied.