期刊
EUROPEAN PHYSICAL JOURNAL D
卷 35, 期 1, 页码 141-146出版社
SPRINGER
DOI: 10.1140/epjd/e2005-00190-9
关键词
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We discuss design considerations and the realization of a magnetic double-well potential on ail atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.
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