4.3 Article

Realizing a stable magnetic double-well potential on an atom chip

期刊

EUROPEAN PHYSICAL JOURNAL D
卷 35, 期 1, 页码 141-146

出版社

SPRINGER
DOI: 10.1140/epjd/e2005-00190-9

关键词

-

向作者/读者索取更多资源

We discuss design considerations and the realization of a magnetic double-well potential on ail atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据