Preparation and characterization of In2O3 thin films for optoelectronic applications

Conductive transparent In2O3 thin films with (222)-preferred orientation were prepared by rapid thermal oxidation (RTO) in static air of indium thin films at condition 200 degrees C/30s. Detailed structural, electrical, and optical characteristics of the film are presented. The data are interpreted to give a direct bandgap of 3.6 eV and indirect bandgap, of 2.5 eV. The grown In2O3 films exhibited high figure of merit and sheet resistance as low as 20 ohm/sq. in the absence of any post-deposition annealing conditions. The mobility of these films was estimated to be 31 cm(2) (.) V-1 (.) s(-1). These results are compared with those of In2O3 films prepared by other methods.