期刊
JOURNAL OF CRYSTAL GROWTH
卷 281, 期 2-4, 页码 513-517出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2005.04.056
关键词
MBE; ruthenium; ZnO; MSM photodetector; Schottky diode
ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal-semiconductor metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function. (c) 2005 Elsevier B.V. All rights reserved.
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