Radiation-induced oscillatory magnetoresistance in a tilted magnetic field in GaAs/AlxGa1-xAs devices -: art. no. 075327

We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high-mobility two-dimensional electron system (2DES). In analogy to the 2D Shubnikov-de Haas effect, the characteristic field B-f and the period of the radiation-induced magnetoresistance oscillations appear dependent upon the component of the applied magnetic field that is perpendicular to the plane of the 2DES. In addition, we find that a parallel component B-parallel to in the range of 0.6 < B(parallel to)1.2 T at a tilt angle of theta=80 degrees leaves the oscillatory pattern essentially unchanged.