期刊
SOLID STATE COMMUNICATIONS
卷 135, 期 5, 页码 314-318出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2005.05.005
关键词
nanostructures; electron transport; fano resonance
Fano lineshapes in resonant transmission in a quantum dot imply interference between localized and extended states. The influence of the charge accumulated at the localized levels, which screens the external gate voltage acting on the conduction channel is investigated. The modified Fano g parameter and the resonant conduction is derived starting from a microscopic Hamiltonian. The latest experiments on 'charge sensing' and 'Coulomb modified Fano sensing' compare well with the results of the present model. (c) 2005 Elsevier Ltd. All rights reserved.
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