Metal-semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation

We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and metallic single-electron transistor characteristics at low temperatures, when exposed to an electron beam, exhibited ambipolar field effect transistor (room temperature) and single-electron transistor (low temperature) characteristics. This metal-semiconductor transition is attributed to inhomogeneous electric fields arising from charging during electron irradiation.