Observation of diffusion and tunneling recombination of dye-photoinjected electrons in ultrathin TiO2 layers by surface photovoltage transients

Surface photovoltage transients were used to monitor both the short time dynamics (> 10 ns) and the spatial distribution of electrons photoinjected in thin (2-20 nm) TiO2 layers from dye molecules adsorbed at the surface. At low temperatures (100-250 K), the dynamics are governed exclusively by spatially dependent tunneling recombination, with a rate that varies with the distance from the surface x as exp(-2x/a), and an initial exponential distribution of photoinjected electrons, no exp(-x/b). This model is confirmed by the observation of power law decay in tirne t(-a/2b) with a ratio a/b = 0.28 +/- 0.04. The stability of cis-di(isothiocyanato)-N-bis(2,2'-bipyridine-4,4'-dicarboxy) ruthenium(II) (N3) dye molecules on TiO2 during treatment in a vacuum at high temperatures was proven. For high temperatures (250-540 K), the thickness dependence of the decays indicates that the dynamics of surface recombination are retarded by the diffusion of electrons toward the interior of the film. The implications for thin layer coating in dye-sensitized solar cells are discussed.