A low loss, dielectric substrate in ZnAl2O4-TiO2 system for microelectronic applications -: art. no. 044101

A temperature stable low loss substrate based on 0.83ZnAl(2)O(4)-0.17TiO(2) (ZAT) was developed as a substitute to Al2O3 for possible applications in microelectronic industry as substrates and packaging materials. The thermal conductivity of ZAT is 59 W m(-1) K-1 which is more than twice as that of Al2O3. The thermal-expansion coefficient of this dielectric is 6.3 ppm/degrees C which is comparable to that of silicon used in microelectronic circuitry. Furthermore, 0.83ZnAl(2)O(4)-0.17TiO(2) dielectric is chemically inert with silicon, which increases its applicability in microelectronic packages. (c) 2005 American Institute of Physics.