We demonstrate the spatial localization of optically active InAs quantum dots in the narrow whispering gallery mode region of a GaAs microdisk cavity. This is achieved through preferential In adatom surface diffusion on a partial cavity structure in a way that can be generalized to other optical cavities. In agreement with our model, and contrary to regrowth on mesa structures, we observe decreasing perimeter quantum dot densities with decreasing microdisk diameters. Photoluminescence measurements indicate optically-active single-quantum-dot emission.
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