期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 17, 期 9, 页码 1809-1811出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2005.852321
关键词
electroplating; GaN; laser liftoff (LLO); light-emitting diode (LED)
A large-area (1 x 1 mm) vertical conductive GaN-mirror-Cu light-emitting diode (LED) fabricated, using the laser liftoff and electroplating techniques is demonstrated. Selective p-GaN top area. was first electroplated by the thick copper film, and then an excimer laser was employed to separate the GaN thin film from the sapphire substrate. The luminance, intensity of the vertical conductive p-side-down GaN-mirror-Cu LED presented about 2.7 times in magnitude as compared with that of the original GaN-sapphire LED (at 20 mA). The light output power for the GaN-mirror-Cu LED was about twofold stronger (at 500 mA). A more stable peak wavelength shift under high current injection was also observed.
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