期刊
THIN SOLID FILMS
卷 487, 期 1-2, 页码 132-136出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2005.01.050
关键词
recombination; dangling bond; silicone; magnetic resonance
In the past, pulsed electrically detected magnetic resonance experiments (pEDMR) with silicon dangling bonds (db) in hydrogenated microcrystalline silicon (mu c-Si:H) showed that at low temperatures, two db recombination mechanism,, exist where electrons are captured (i) by dbs directly (db-dc) or (ii) via band-tail states (tail-db). Here. similar experiments on hydrogenated amorphous silicon (a-Si:H) and crystalline silicon/silicondioxide interfaces (c-Si/SiO2) are presented. They show that at low temperatures, only the db-dc is detectable at dbs in the c-Si/SiO2 interface (Pb centers) while in a-Si:H, only tail-db processes are observed. (C) 2005 Elsevier B.V. All rights reserved.
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