High mobility n-channel organic thin-film transistors and complementary inverters -: art. no. 064502

We report on n-channel organic thin-film transistors (OTFTs) with field-effect mobility comparable to that typically reported for p-channel OTFTs fabricated from pentacene. The OTFTs were fabricated on oxidized silicon wafers using N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as the semiconductor and with Au, Cr, Al, and LiF/Al source and drain contacts. Accumulation mode n-channel transistor operation is demonstrated for all contact metals despite the large differences in their work functions. High field-effect mobility near 0.6 cm(2)/V s and large I-on/I-off of 10(7) were achieved. Device performance is sufficient to demonstrate pentacene/PTCDI-C13H27 TFT complementary inverters with record gain. (c) 2005 American Institute of Physics.