期刊
JOURNAL OF CRYSTAL GROWTH
卷 283, 期 1-2, 页码 180-184出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2005.05.071
关键词
characterization; doping; p-type conduction; DC reactive magnetron sputtering; zinc compounds
p-Type ZnO thin films have been realized via monodoping of Li acceptor by adopting DC reactive magnetron sputtering. The lowest room-temperature resistivity was found to be 17.6 Omega cm with a Hall mobility of 3.47 cm(2) V-1 s(-1) and carrier concentration of 1.01 x 10(17)cm(-3) for Li-doped p-type ZnO film deposited on glass substrate. The Li-doped ZnO film possessed a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. Moreover, the effects of Li content on the crystallinity, electrical and optical properties of p-type ZnO films were discussed. (c) 2005 Elsevier B.V. All rights reserved.
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