4.6 Article

Memory in quantum-dot photoluminescence blinking

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NEW JOURNAL OF PHYSICS
卷 7, 期 -, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/7/1/197

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We demonstrate that subsequent on- and off-times of the luminescence blinking of semiconductor quantum dots (QDs) are correlated, indicating that the process behind is not memoryless. A residual memory, which has been overlooked in previous investigations of the blinking, is found to last for several (similar to 40) detected on/off cycles. No influence of the substrate nature or the excitation intensity is observed, pointing to a process intrinsic to the QDs. These results should encourage re-analysis of existing data and may represent the key to understand the underlying physical mechanism of QD luminescence blinking.

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