期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 44, 期 10, 页码 7433-7435出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.7433
关键词
indium gallium nitride; semiconductor-electrolyte contacts; photoelectrochernical cells; photoelectrolysis; water splitting
The photoelectrochemical properties of InxGa1-xN (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In0.02Ga0.91 N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.
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