期刊
IEEE ELECTRON DEVICE LETTERS
卷 26, 期 10, 页码 719-721出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.854397
关键词
n-MOSFET; nonstoichiometric zirconium oxide; resistance random access memory (RAM); resistive switching; switching mechanism; tri-layer structure
The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application. The Pt/ZrO chi/p(+)-Si sandwich structure fabricated by reactive sputtering shows two stable resistance states. By applying proper bias, resistance switching from one to another state can be obtained. The composition in ZrO chi thin films were confirmed from X-ray photoelectron spectroscope (XPS) analysis, which showed three layers such as top stoichiometric ZrO2 layer with high resistance, transition region with medium resistance, and conducting ZrO chi bulk layer. The resistance switching can be explained by electron trapping and detrapping of excess Zr+ ions in transition layer which control the distribution of electric field inside the oxide, and, hence the current flow.
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