Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum, and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics(1) and spin-based quantum information processing(2). This coupling can be regulated with quantum confinement in semiconductor heterostructures through band-structure engineering. Here we investigate the spin Hall effect(3,4) and current-induced spin polarization(5,6) in a two-dimensional electron gas confined in (110) AlGaAs quantum wells using Kerr rotation microscopy. In contrast to previous measurements(7-10), the spin Hall profile shows complex structure and the current-induced spin polarization is out-of-plane. The experiments map the strong dependence of the current-induced spin polarization to the crystal axis along which the electric field is applied, reflecting the anisotropy of the spin-orbit interaction. These results reveal opportunities for tuning a spin source using quantum confinement and device engineering in non-magnetic materials.
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