期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 34, 期 10, 页码 1310-1312出版社
MINERALS METALS MATERIALS SOC
DOI: 10.1007/s11664-005-0255-6
关键词
4H-SiC; Ni/Ti/Al; ohmic contact; simultaneous formation
Fabrication procedures for silicon carbide power metal oxide semiconductor field effect transistors (MOSFETs) can be improved through simultaneous formation (i.e., same contact materials and one step annealing) of ohmic contacts on both the p-well and n-source regions. We have succeeded with the simultaneous formation of the ohmic contacts for p- and n-type SiC semiconductors by examining ternary Ni/Ti/Al materials with various compositions, where a slash symbol / indicates the deposition sequence starting with Ni. The Ni(20 nm)/Ti(50 nm)/Al(50 nm) combination provided specific contact resistances of 2 X 10(-3) Omega-cm(2) and 2 X 10(-4) Omega-cm(2) for p- and n-type SiC, respectively, after annealing at 800 C for 30 min, where the doping level of Al in the SiC substrate was 4.5 X 10(18) cm(-3) and the level of N was 1.0 X 10(19) cm(-3).
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