High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy -: art. no. 152101

Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A degrees X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2 Omega cm, high hole concentration of 1.7x10(18) cm(-3) and high mobility of 20.0 cm(2)/V s. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication. (C) 2005 American Institute of Physics.