The formation of self-organized Si nanostructures induced by Mo seeding during normal incidence Ar+ ion bombardment at room temperature is reported. Silicon surfaces without Mo seeding develop only power-law roughness during 1000 eV ion bombardment at normal incidence, in agreement with scaling theory expectations of surface roughening. However, supplying Mo atoms to the surface during ion bombardment seeds the development of highly correlated, nanoscale structures (dots) that are typically 3 nm high with a spatial wavelength of approximately 30 nm. With time, these saturate and further surface roughening is dominated by the growth of long-wavelength corrugations. (C) 2005 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据