BiFeO3/Pb(Zr-0.5,Ti-0.5)O-3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12 mu C/cm(2), which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles affecting the motion of the domain wall in the multilayer films than those in the pure PZT films. This conclusion is also confirmed by measuring the dependence of capacitance with ac field under subswitching field. The frequency dependence of dielectric loss indicates that the dielectric loss (tan delta) of the multilayer is smaller than that of the PZT thin films at high frequency. Magnetic measurement indicates that the multilayer films are antiferromagnetic. (C) 2005 American Institute of Physics.
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