期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 44, 期 11, 页码 8113-8115出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.8113
关键词
NC-AFM; SKPM; f-V curve; CPD; SPS mapping; UHV
We have measured cantilever resonance frequency versus sample bias voltage and generated frequency vs bias (f-V) curves using an ultrahigh-vacuum noncontact atomic force microscope (UHV NC-AFM). Using the f-V data, we calculated the contact potential difference (CPD) between the tip and the sample. These CPD measurements were compared with those that were directly observed with a scanning Kelvin probe force microscope (SKPM) on the same atomically resolved area of the sample using a UHV-AFM. The CPD values obtained by both methods were similar, however, it was difficult to obtain CPD values that agreed precisely on the atomic scale.
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