Fabrication of cerium-doped LaNiO3 thin films on LaAlO3 (100) substrate by pulsed laser deposition -: art. no. 093527

In this study we report the fabrication of La1-xCexNiO3 (0 <= x <= 0.4) thin films on a LaAlO3 (100) substrate by pulsed laser deposition where the cerium ions are believed to be in the Ce (IV) oxidation state. At low Ce concentrations, the films grow in the (100) direction with a pseudocubic structure and above x similar to 0.3, they exhibit a change in the crystal symmetry. Core-level photoelectron spectroscopic studies of the thin films deposited have shown that the cerium exists in the +4 oxidation state. Correspondingly, the nickel exhibits mixed valency in these thin films. Conductivity of this highly metallic system progressively decreases as more and more Ce is doped. In the range 0.3 < x < 0.4, the system undergoes a transition from metallic to semiconducting behavior. The electrical nature of La1-xCexNiO3 thin films gives clear indications of significant electron-lattice interactions present for compositions close to the transition. (c) 2005 American Institute of Physics.