期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 44, 期 11, 页码 8147-8152出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.8147
关键词
organic light-emitting devices; simulation; electrical; dopant; recombination
We present a numerical model for the quantitative simulation of electrical characteristics for organic light-emitting devices (OLEDs) with fluorescent dopants in the host. We use drift-diffusion equations in terms of the electron and hole current densities coupled with the Poisson's equation. Compared with other models proposed in previous literature, we include charge carrier trapping and direct carrier recombination phenomena on the fluorescent dopants in the simulation. Furthermore, current density, charge distribution, and recombination data in the device are obtained from this numerical study. Results for several multilayer devices with different fluorescent dopant concentrations are presented in this article. 'On the basis of the experimental data of a typical doped device, we have found good agreement between the simulation results and the experimental results.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据