期刊
IEEE ELECTRON DEVICE LETTERS
卷 26, 期 11, 页码 823-825出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2005.857704
关键词
carbon nanotube (CN); dual gate; field-effect transistor (FET); short-channel effect
We report on a high-performance back-gated carbon nanotube field-effect transistor (CNFET) with a peak transconductance of 12.5 mu S and a delay time per unit length of tau/L = 19 ps/mu m. In order to minimize the parasitic capacitances and optimize the performance of scaled CNFETs, we have utilized a dual-gate design and have fabricated a 40-nm-gate CNFET possessing excellent subthreshold and output characteristics without exhibiting short-channel effects.
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