期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 23, 期 6, 页码 2910-2913出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.2062651
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In this work we demonstrate the feasibility of x-ray lithography on SU-8 photoresist doped with the laser dye Rhodamine 6G, while retaining the photoactive properties of the embedded dye. Two kinds of structures are fabricated via soft x-ray lithography and characterized: a laser and in amplified spontaneous emission light source that couples out light normal to the chip plane. In addition we examine the influence of the x-ray irradiation on the fluorescence of thin films of dye doped SU-8. The dye embedded in the SU-8 is optically excited during, characterization by an external light source tuned to the absorption band of the dye. (c) 2005 American Iaviuon SocietY.
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